???`? qs043-401m0061 (2/4) ?? ? ??? dimension:mm ????g?R ollector-mitter oltage ` ? g R ate-mitter oltage ollector urrent p ? ollector ower issipation unction emperature ange torage emperature ange ~ F R(erminal to ase ,inute) solation oltage , odule ase to eatsink . ounting orque usbar to ain erminal pdmb200b12c .pdmb200b1 2c 2 . ? (kgf?cm) . . . ollector-mitter ut-ff urrent = 1200v, = 0v . ` ? ate-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 200a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, = 200ma . . nput apacitance = 10v, = 0v,= 1mh 16,600 N r g ise ime . . `??rg urn-on ime . . r g all ime . . ???rg witching ime `???rg urn-off ime = 600v l = 3 g = 2 = 15v . . ? ?`?`??`? orward urrent . . . R eak orward oltage = 200a, = 0v . . r g everse ecovery ime = 200a, = -10v i/t= 400a/s . . ? . . . . hermal mpedance iode th(j-c) junction to case . 7(g2) 6(e2) 5(e1) 4(g1) (c1) 3 (e2) 2 (c2e1) 1 16 16 16 9 9 30 +1.0 - 0.5 23 8 7 label 2-?6.5 23.0 23.0 17.0 4 18.0 4 3-m5 16.0 0.25 14.0 48.0 12. 0 12. 0 12.0 11. 0 11.0 80 94.0 1 2 3 7 6 5 4 30 +1.0 - 0.5 14 9 14 9 14 4-fasten tab #110 t=0.5 7.5 21.2 7 label 3-m6 108 93 0.25 14 14 14 11 11 4-? 6. 5 62 13 11 20 3 2 1 7 6 5 4 6 15 6 0.25 48 24 25 25 pdmb200b12c pdmb200b12c2
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3$ qs043-401m0061 (3/4) 99e99?9t999?9y9t 99e99?9t999?9y9t9? 0246810 0 100 200 300 400 collector to emitter voltage v ce (v) collector current i c (a) fig.1- output characteristics (typical) t c =25 10v 9v 12v 15v v ge =20v 8v 7v 048121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.2- collector to emitter on voltage vs. gate to emitter voltage (typical) t c =25 200a i c =100a 400a 048121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.3- collector to emitter on voltage vs. gate to emitter voltage (typical) i c =100a 200a 400a t c =125 0 2 4 6 8 10 12 14 16 0 300 600 900 1200 1500 0 100 200 300 400 500 600 700 800 total gate charge qg (nc) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) fig.4- gate charge vs. collector to emitter voltage (typical) v ce =600v 400v 200v r l =3 t c =25 0.1 0.2 0.5 1 2 5 10 20 50 100 200 100 200 500 1000 2000 5000 10000 20000 50000 100000 collector to emitter voltage v ce (v) capacitance c (pf) fig.5- capacitance vs. collector to emitter voltage (typical) cies coes cres v ge =0v f=1 mh z t c =25 0 50 100 150 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 collector current i c (a) switching time t (s) fig.6- collector current vs. switching time (typical) t off t f t r t on v cc =600v r g = 2.0 v ge =15v t c =25
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3$ qs043-401m0061 (4/4) 99e99?9t999?9y9t 99e99?9t999?9y9t9? 01234 0 100 200 300 400 forward voltage v f (v) forward current i f (a) fig.8- forward characteristics of free wheeling diode (typical) t c =25 t c =125 1 2 5 10 20 50 100 200 0.05 0.1 0.2 0.5 1 2 5 10 series gate impedance r g () switching time t (s) fig.7- series gate impedance vs. switching time (typical) v cc =600v i c =200a v ge =15v t c =25 tf tr ton toff 0 200 400 600 800 1000 1200 5 10 20 50 100 200 500 1000 -di/dt (a/s) peak reverse recovery current i rrm (a) reverse recovery time trr (ns) fig.9- reverse recovery characteristics (typical) i rrm trr i f =200a t c =25 10 -5 10 -4 10 -3 10 -2 10 -1 110 1 5x10 -4 1x10 -3 2x10 -3 5x10 -3 1x10 -2 2x10 -2 5x10 -2 1x10 -1 2x10 -1 5x10 -1 1 time t (s) transient thermal impedance rth (j-c) (/w) fig.11- transient thermal impedance t c =25 1 shot pulse frd igbt 0 400 800 1200 1600 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 collector to emitter voltage v ce (v) collector current i c (a) fig.10- reverse bias safe operating area r g =2 v ge =15v t c Q125
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